Method to enhance electrode adhesion stability

An integrated circuit (IC) comprising:

• a dielectric layer;
• an adhesion layer overlying the dielectric layer;
• and
• a first electrode overlying and directly contacting the adhesion layer, wherein the adhesion layer has a first surface energy at an interface at which the first electrode contacts the adhesion layer, wherein the first electrode has a second surface energy at the interface, and wherein the first surface energy is greater than the second surface energy.

A method for forming an integrated circuit (IC), the method comprising:

• forming a first via in a via dielectric layer, such that a top surface of the first via is even with a top surface of the via dielectric layer;
• forming a conductive adhesion layer overlying and directly contacting the top surface of the via dielectric layer and the top surface of the first via, wherein the via dielectric layer has a first surface energy at the top surface of the via dielectric layer;
• forming a first metal layer overlying and directly contacting the conductive adhesion layer, wherein the conductive adhesion layer has a second surface energy at an interface at which the first metal layer contacts the conductive adhesion layer, wherein the first metal layer has a third surface energy at the interface, and wherein the third surface energy is greater than the first surface energy and less than the second surface energy;
• forming an inter-electrode dielectric layer covering the first metal layer;
• forming a second metal layer covering the inter-electrode dielectric layer;
• patterning the first metal layer, the inter-electrode dielectric layer, and the second metal layer to define an electronic device overlying the first via;
• and
• forming a second via overlying and directly contacting the electronic device.