US 2019/0096750 A1 · Selective Film Forming Method and Method of Manufacturing Semiconductor Device

Abstract

A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

Claims8

Dependent claims

A selective film forming method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate,

wherein a first surface which is an exposed surface of the conductive film is formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, and a second surface which is an exposed surface of the insulating film has OH groups, and
wherein the method comprises:
selectively forming a first Ru film having a first film thickness only on the first surface using an Ru(EtCp)2 gas and an O2 gas;
and
selectively forming a first SiO2-containing insulating film having a second film thickness only on the second surface by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

2 more elements

A method of manufacturing a semiconductor device, comprising:

preparing a substrate to be processed having an interlayer insulating film formed on a surface of the substrate, the interlayer insulating film having a recess of a predetermined pattern formed on a surface of the interlayer insulating film;
burying a conductive film formed of one of Ru, RuO2, Pt, Pd, Cu, CuO, and CuO2 in the recess;
etching the conductive film so that a surface of the conductive film in the recess is at the same height as a surface of the interlayer insulating film or at a predetermined depth position from the surface of the interlayer insulating film;
when the conductive film is formed of Cu, oxidizing the surface of the conductive film into CuO or CuO2;
selectively forming a first Ru film having a first film thickness only on a first surface, which is an exposed surface of the conductive film and is formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas;
and
selectively forming a first SiO2-containing insulating film having a second film thickness only on a second surface, which is an exposed surface of the interlayer insulating film having OH groups, by performing one or more times a process of supplying TMA to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

4 more elements

Dependencies are inferred from the claim text.

Selective Film Forming Method and Method of Manufacturing Semiconductor Device

Life of this patent

Selective Film Forming Method and Method of Manufacturing Semiconductor Device

Life of this patent

Abstract

Claims8