Sinker to buried layer connection region for narrow deep trenches

An integrated circuit (IC), comprising:

• a semiconductor substrate of a first conductivity type having a top surface and a buried layer (BL) of a second conductivity type;
• and
• one or more transistors located within an area surrounded by dual-trenches, the dual-trenches including:
• an inner trench rings having a first trench width and a first trench depth, the inner trench ring including an electrically conductive filler material extending from a top surface of said semiconductor surface through said BL, the electrically conductive filler material being isolated from said semiconductor substrate;
• an outer trench ring surrounding the inner trench ring, the outer trench ring including an electrically conductive filler material that provides a contact from the top surface of the semiconductor surface through the BL to the substrate, the outer trench ring having a second trench width greater than the first trench width and a second trench depth greater than the first trench depth.

An integrated circuit (IC), comprising:

• a substrate having a semiconductor surface of a first conductivity type and a buried layer (BL) of a second conductivity type, the IC having a plurality of transistors connected together to implement a circuit function;
• at least a portion of said plurality of transistors within islands of said substrate defined by dual-trenches including:
• inner trench rings extending from a top surface of said semiconductor surface through said BL with a first trench width and a first trench depth that are isolated from said semiconductor surface to provide isolation trenches;
• outer trench rings that are located outside said inner trench rings, the outer trench rings including an electrically conductive filler material that provides a contact from said top surface of said semiconductor surface through said BL to the substrate at a bottom side of the outer trench rings, the outer trench rings having a second trench width that is greater than said first trench width and a second trench depth greater than said first trench depth.