Barrier for preventing eutectic break-through in through-substrate vias
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsAllen W. Hanson, Rajesh Baskaran, Timothy E. Boles
Life of this patent
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Abstract
A method involving a barrier for preventing eutectic break-through in through-substrate vias is disclosed. The method generally includes steps (A) to (D). Step (A) may form one or more vias through a substrate. The substrate generally comprises a semiconductor. Step (B) may form a first metal layer. Step (C) may form a barrier layer. The barrier layer generally resides between the vias and the first metal layer. Step (D) may form a second metal layer. The second metal layer may be in electrical contact with the first metal layer through the vias and the barrier layer.
Claims21
1-20. (canceled)
A method of forming a device, comprising:
- forming a barrier layer on a first side of a substrate;
- forming a first metal layer on said barrier layer;
- forming one or more vias through said substrate;
- and
- forming a second metal layer through said one or more vias and on a second side of said substrate, said second metal layer being in electrical and physical contact with said second side of said substrate and said one or more vias.
A device, comprising:
- a substrate;
- a barrier layer formed on a first side of said substrate;
- a first metal layer formed on said barrier layer;
- one or more vias formed through said substrate;
- and
- a second metal layer formed through said one or more vias and on a second side of said substrate, said second metal layer being in electrical and physical contact with said second side of said substrate and said one or more vias.
A method of forming a barrier for preventing eutectic break-through in a device, comprising:
- forming a barrier layer on a first side of a substrate;
- forming a first metal layer on said barrier layer;
- forming one or more vias through said substrate from a second side of said substrate to said barrier layer on said first side of said substrate;
- and
- forming a second metal layer through said one or more vias and on said barrier layer within said one or more vias.
Dependencies are inferred from the claim text.