Interconnect structures and methods for forming same
AssigneeInvensas Corporation
InventorsCyprian Emeka Uzoh, Laura Wills Mirkarimi
Life of this patent
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Abstract
A method for forming an interconnect structure in an element is disclosed. The method can include patterning a cavity in a non-conductive material. The method can include exposing a surface of the cavity in the non-conductive material to a surface nitriding treatment. The method can include depositing a conductive material directly onto the treated surface after the exposing.
Claims35
A method for forming an interconnect structure in an element, the method comprising:
- providing a non-conductive material having a cavity;
- exposing a surface of the cavity in the non-conductive material to a surface nitriding treatment;
- and
- depositing a conductive material onto the treated surface after the exposing.
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-36. (canceled)
A method for forming an interconnect structure in an element, the method comprising:
- patterning a cavity in a non-conductive material;
- exposing a surface of the cavity in the non-conductive material to a plasma comprising a surface-treating species;
- and
- depositing a conductive material directly onto the treated surface after the exposing.
-50. (canceled)
A method for forming an interconnect structure in an element, the method comprising:
- providing a layer comprising a non-conductive material with one or more cavities defined therein;
- exposing a surface of the layer to a plasma comprising a surface-treating species;
- and
- forming a conductive material to at least partially fill the one or more cavities in the layer without an intervening conductive barrier layer.
-63. (canceled)
Dependencies are inferred from the claim text.