FinFET Structure with Controlled Air Gaps
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Che Tsai, Min-Yann Hsieh, Hua Feng Chen, Kuo-Hua Pan
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Abstract
The present disclosure provides an integrated circuit (IC) structure. The IC structure includes first and second fins formed on a semiconductor substrate and laterally separated from each other by an isolation feature, the isolation feature formed of a dielectric material that physically contacts the semiconductor substrate; and a contact feature between the first and second fins and extending into the isolation feature thereby defining an air gap vertically between the isolation feature and the contact feature, the dielectric material of the isolation feature extending from the semiconductor substrate to the contact feature.
Claims20
An integrated circuit (IC) structure, comprising:
- first and second fins formed on a semiconductor substrate and laterally separated from each other by an isolation feature, the isolation feature formed of a dielectric material that physically contacts the semiconductor substrate;
- and
- a contact feature between the first and second fins and extending into the isolation feature thereby defining an air gap vertically between the isolation feature and the contact feature, the dielectric material of the isolation feature extending from the semiconductor substrate to the contact feature.
An integrated circuit (IC) structure, comprising:
- first and second fins formed on a semiconductor substrate and laterally separated from each other by an isolation feature, wherein the isolation feature formed of a dielectric material that physically contacts the semiconductor substrate;
- and
- a contact feature between the first and second fins and extending into the isolation feature, thereby defining an air gap vertically between the isolation feature and the contact feature, wherein the air gap is vertically between a top surface and a bottom surface of the dielectric material of the isolation feature.
An integrated circuit (IC) structure, comprising:
- first and second fins formed on a semiconductor substrate and laterally separated from each other by an isolation feature;
- and
- a contact feature between the first and second fins and extending into the isolation feature thereby defining an air gap vertically between the isolation feature and the contact feature, wherein the contact feature includes a tip portion spaced away from the first and second fins, and wherein the air gap extends to a bottom surface of the tip portion.
Dependencies are inferred from the claim text.