Semiconductor fabrication using process control parameter matrix

A computer program product for controlling processing of a substrate, the computer program product tangibly embodied in a non-transitory computer readable medium and comprising instructions for causing a processor to:

• generate a matrix that relates a plurality of process parameters to a calculated removal profile, wherein generating the matrix comprises finding matrix values that best fit a plurality of groups of process parameter values to a plurality of measured removal profiles;
• obtain a target removal profile and a plurality of state parameter values for each respective substrate of a plurality of substrates;
• for each respective substrate, calculate respective control parameter values to apply to the respective substrate by applying the target removal profile and the state parameter values to the matrix;
• and
• cause a semiconductor processing system to subject each respective substrate to the process using the respective process parameter values.

A polishing system, comprising:

• a support to hold a polishing pad;
• a carrier head to hold a substrate in contact with the polishing pad, the carrier head having a plurality of chambers;
• a motor to generate relative motion between the support and the carrier head;
• and
• a controller configured to:
• generate a matrix that relates a plurality of process parameters to a calculated removal profile, wherein generating the matrix comprises finding matrix values that best fit a plurality of groups of process parameter values to a plurality of measured removal profiles, wherein the process parameter values comprise state parameter values and control parameter values, and wherein the control parameter values comprise pressures for the chambers in the carrier head;
• obtain a target removal profile and a plurality of state parameter values for each respective substrate of a plurality of substrates;
• for each respective substrate, calculate respective control parameter values to apply to the respective substrate by applying the target removal profile and the state parameter values to the matrix, wherein the respective control parameter values comprise respective pressures for the chambers in the carrier head;
• and
• cause a semiconductor processing system to subject each respective substrate to the process using the respective process parameter values.