Semiconductor fabrication with electrochemical apparatus
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAndrew Joseph KELLY, Yusuke ONIKI
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Abstract
A method includes holding a semiconductor substrate by a substrate holder of an electrochemical apparatus. The electrochemical apparatus includes a reaction cell and a counter electrode, and the semiconductor substrate has an exposed surface containing germanium, silicon, silicon germanium or any of III-V elements. The exposed surface of the semiconductor substrate is immersed in an electrolyte bath in the reaction cell. A portion of the semiconductor substrate is removed by supplying a first current to the counter electrode and a second current to the semiconductor substrate. The second current has a negative bias. The negative bias is smaller than 0V and equal to or larger than minus 5V.
Claims21
A method, comprising:
- holding a wafer by a holder of an electrochemical apparatus, wherein the electrochemical apparatus further comprises a reaction cell and a counter electrode, and the wafer has an exposed surface comprising germanium, silicon, silicon germanium, or any of III-V elements;
- immersing the exposed surface of the wafer in an electrolyte bath in the reaction cell;
- and
- removing a portion of the wafer by supplying a first voltage to the counter electrode and a second voltage to the wafer, wherein the second voltage is negative.
11-15. (canceled)
A method, comprising:
- forming a semiconductor fin on a semiconductor substrate, the semiconductor fin comprising germanium, silicon, silicon germanium, or any of III-V elements;
- forming a mask layer on a top portion of the semiconductor fin;
- and
- trimming the semiconductor fin, wherein trimming the semiconductor fin comprises:
- immersing the semiconductor fin in an electrolyte bath;
- and
- laterally removing a first portion of the semiconductor fin by supplying a first voltage to a counter electrode in the electrolyte bath and a second voltage to the semiconductor substrate, wherein the second voltage is negative.
A method, comprising:
- forming a first semiconductor layer over a semiconductor substrate of a wafer;
- forming a second semiconductor layer over the first semiconductor layer;
- immersing the second semiconductor layer in an electrolyte bath;
- removing a first native oxide over the second semiconductor layer by supplying a first voltage to the wafer and a second voltage to a counter electrode in the electrolyte bath, wherein the first voltage is negative;
- etching the first semiconductor layer and the second semiconductor layer to form a fin;
- and
- suspending the second semiconductor layer by etching the first semiconductor layer beneath the second semiconductor layer.
Dependencies are inferred from the claim text.