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US 2019/0096498 A1Published application
Sense amplifier driving device
AssigneeMagnaChip Semiconductor, Ltd.
InventorDuk Ju JEONG
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Abstract
A semiconductor memory device includes a memory cell, a bit line connected to the memory cell, and a sense amplifier. The sense amplifier is connected to the bit line, receives a first control signal, and detects and amplifies a bit line signal of the bit line. The sense amplifier includes a precharge device that is turned on or turned off based on a read control signal, and a transistor output unit that outputs an output voltage based on the bit line signal when the precharge device is turned off.
Claims12
A method for sensing one time programmable (OTP) memory cells connected to a bit line, the method comprising:
- receiving a first control signal by a sense amplifier;
- detecting a bit line signal of the bit line by the sense amplifier;
- amplifying the bit line signal by the sense amplifier;
- receiving, by the sense amplifier, a first operation voltage from a voltage generator;
- outputting the first operation voltage or a ground voltage to a second level shifter based on the bit line signal of the bit line.
2 more elements
Dependencies are inferred from the claim text.