Memory system
AssigneeToshiba Memory Corporation
InventorsSuguru NISHIKAWA, Yoshihisa Kojima, Riki Suzuki, Masanobu Shirakawa, Toshikatsu Hida
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Abstract
According to one embodiment, a memory system includes a nonvolatile semiconductor memory, and a controller. The semiconductor memory includes a memory cell, and a write circuit configured to write data to the memory cell by applying a program voltage to the memory cell and comparing a threshold voltage of the memory cell with a first reference voltage corresponding to the write data. The write circuit is configured to execute a first programming operation to obtain a value of a write parameter by comparing the threshold voltage with a second reference voltage different from the first reference voltage.
Claims19
A memory system comprising:
- a nonvolatile semiconductor memory;
- and
- a controller configured to control the semiconductor memory,
- wherein
- the semiconductor memory comprises:
- a memory cell;
- and
- a write circuit configured to write data to the memory cell by applying a program voltage to the memory cell and comparing a threshold voltage of the memory cell with a first reference voltage corresponding to the write data, wherein
- the write circuit is configured to execute a first programming operation to obtain a value of a write parameter by comparing the threshold voltage of the memory cell with a second reference voltage, the second reference voltage being different from the first reference voltage.
Dependencies are inferred from the claim text.