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US 2019/0096484 A1Published application
Apparatuses and methods including memory access in cross point memory
AssigneeMicron Technology, Inc.
InventorsDerChang Kau, Gianpaolo Spadini
Life of this patent
Estimating the term…
Abstract
Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
Claims20
An apparatus comprising:
- a first group of conductive lines;
- a second group of conductive lines;
- memory cells, each of the memory cells located between a conductive line in the first group of conductive lines and a conductive line in the second groups of conductive lines;
- and
- switches, each of the switches located between a conductive line in the first group of conductive lines and a conductive line in the second groups of conductive lines, wherein each of the switches includes a phase change material.
2 more elements
An apparatus comprising:
- a first group of conductive lines, each conductive line in the first group of conductive lines including a length in a first direction and a width in a second direction, the width of a first conductive line in the first group of conductive lines being greater than the width of each of second conductive lines in the first group of conductive lines;
- a second group of conductive lines, each conductive line in the second group of conductive lines including a length in the second direction, the second group of conductive lines passing over the first group of conductive lines at cross points;
- and
- memory cells, each of the memory cells located between respective cross point of the cross points.
1 more element
An apparatus comprising:
- a first group of conductive lines, each conductive line in the first group of conductive lines including a length in a first direction;
- a second group of conductive lines, each conductive line in the second group of conductive lines including a length in a second direction, the second group of conductive lines passing over a first conductive line in the first group of conductive lines at first cross points and passing over second conductive lines in the first group of conductive lines at second cross points;
- switches located at the first cross points, each of the switches including a phase change material;
- and
- phase change memory cells, each of the phase change memory cells located at respective cross point of the second cross points.
2 more elements
Dependencies are inferred from the claim text.