Semiconductor memory device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorToshiaki DOZAKA
Life of this patent
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Abstract
According to one embodiment, semiconductor memory device includes a first circuit that determines data stored in a memory cell; and a second circuit that controls the first circuit, wherein in a sequence in which the second circuit writes first data in the memory cell, the first circuit generates a first current of a first current value, and determines data stored in the memory cell based on the first current and a second current flowing in the memory cell, and in a sequence in which the second circuit writes second data different from the first data in the memory cell, the first circuit generates a third current of a second current value different from the first current value, and determines data stored in the memory cell based on the third current and the second current.
Claims20
A semiconductor memory device, comprising:
- a memory cell that stores data;
- a first circuit that determines data stored in the memory cell;
- and
- a second circuit that controls the first circuit, wherein
- in a sequence in which the second circuit writes first data in the memory cell, the first circuit generates a first current of a first current value, and determines data stored in the memory cell based on the first current and a second current flowing in the memory cell, and
- in a sequence in which the second circuit writes second data different from the first data in the memory cell, the first circuit generates a third current of a second current value different from the first current value, and determines data stored in the memory cell based on the third current and the second current.
Dependencies are inferred from the claim text.