Quantizing circuits having improved sensing

A device, comprising:

• a resistive memory array comprising a plurality of storage locations;
• and
• a quantizing circuit, wherein the quantizing circuit comprises:
• a combination circuit configured to combine an analog input signal related to a value stored in a data storage location of the plurality of storage locations, with an analog feedback signal to produce a delta signal;
• an integrator configured to receive and integrate the delta signal to produce a sigma signal;
• an analog-to-digital converter configured to receive the sigma signal and compare the sigma signal with a reference signal to produce a digital output signal;
• and
• a digital-to-analog converter configured to convert the digital output signal to the analog feedback signal.

A method of sensing a memory element in a system, the method comprising:

• providing, from a processor, a read command signal to a phase change memory device or a magnetoresistive memory device;
• determining, in a quantizing circuit of the memory device, a difference between a reference voltage and a voltage of an electrical conductor connected to a resistive memory element of the phase change memory device or the magnetoresistive memory device, wherein determining the difference comprises converting a voltage signal into a current signal;
• integrating, with an integrator of the quantizing circuit, the difference over time to determine a sum;
• and
• controlling the voltage of the electrical conductor by selectively conducting a reference current through the electrical conductor based on the sum.