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US 2019/0096451 A1Published application
Dqs-offset and read-rtt-disable edge control
AssigneeMicron Technology, Inc.
InventorKallol Mazumder
Life of this patent
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Abstract
Devices, systems, and methods include controls for on-die termination (ODT) and data strobe signals. For example, a command to de-assert ODT for a data pin (DQ) during the read operation. An input, such as a mode register, receives an indication of a shift mode register value that corresponds to a number of shifts of a rising edge of the command in a backward or a falling edge in a forward direction. A delay chain delays the appropriate edge of received command the number of shifts in the corresponding direction to generate a shifted edge command signal. Combination circuitry then combines a falling edge command signal with a shifted rising edge command signal to form a transformed command.
Claims20
A semiconductor device comprising:
- a delay chain comprising a plurality of serially connected flip-flops, wherein the delay chain is configured to:
- receive a data (DQ) ODT command to de-assert on-die termination (ODT) for a DQ pin of the semiconductor device and to generate and output a plurality of delayed DQ commands in a backward direction to generate a shifted DQ command;
- and
- receive a data strobe pin (DQS) ODT command to de-assert ODT for a DQS pin of the semiconductor device and to generate and output a plurality of DQS delayed commands in a backward direction to generate a shifted DQS command;
- and
- selection circuitry configured to:
- receive a DQ selection signal to indicate a selected delayed DQ command from the plurality of delayed DQ commands used to generate the shifted DQ command, wherein the shifted DQ command is configured to disable the ODT for the DQ pin during a memory read based at least in part on the selected delayed DQ command;
- and
- receive a DQS selection signal to indicate a selected delayed DQS command from the plurality of delayed DQS commands used to generate the shifted DQS command, wherein the shifted DQS command is configured to disable the ODT for the DQS pin during a memory read based at least in part on the selected delayed DQS command.
6 more elements
A semiconductor device, comprising:
- one or more delay chains each comprising a plurality of serially connected flip-flops, wherein each of the the one or more delay chains is configured to:
- receive a DQ command to de-assert on-die termination (ODT) for a data strobe pin of the semiconductor device and to generate and output a plurality of delayed DQ commands in a backward direction to generate a shifted DQ command;
- and
- receive a DQS command to de-assert ODT for a data pin of the semiconductor device and to generate and output a plurality of delayed DQS commands in a backward direction to generate a shifted DQS command;
- selection circuitry configured to:
- receive a first selection signal to indicate a first delayed DQ command from the plurality of delayed DQ commands used to generate the shifted DQ command, wherein the shifted DQ command is configured to disable the ODT on the data pin during a memory read based at least in part on the first delayed DQ command;
- receive a second selection signal to indicate a second delayed DQ command from the plurality of delayed DQ commands to generate the shifted DQ command, wherein the shifted DQ command has a duration that is based at least in part on the second delayed DQ command;
- receive a third selection signal to indicate a first delayed DQS command from the plurality of delayed DQS commands used to generate the shifted DQS command, wherein the shifted DQS command is configured to disable the ODT on the data strobe pin during a memory read based at least in part on the first delayed DQS command;
- and
- receive a fourth selection signal to indicate a second delayed DQS command from the plurality of delayed DQS commands to generate the shifted DQS command, wherein the shifted DQS command has a duration that is based at least in part on the second delayed DQS command.
7 more elements
A method, comprising:
- receiving a read command to begin a read operation;
- receiving a set of shift values to control edges of a de-assert data (DQ) on-die termination (ODT) command for a data pin during the read operation;
- delaying an input DQ ODT command in a DQ delay chain to generate a plurality of shifted DQ ODT commands;
- selecting a first shifted DQ ODT command from the plurality of shifted DQ ODT commands using a first value of the set of shift values;
- selecting a second shifted DQ ODT command from the plurality of shifted DQ ODT commands using a second value of the set of shift values;
- and
- combining the first and second shifted DQ ODT commands to form a shifted ODT command;
- receiving a set of data strobe (DQS) shift values to control edges of a de-assert DQS ODT command for a data strobe pin during the read operation;
- delaying an input DQS ODT command in a DQS delay chain to generate a plurality of shifted DQS ODT commands;
- selecting a first shifted DQS ODT command from the plurality of shifted DQS ODT commands using a first value of the set of DQS shift values;
- selecting a second shifted DQS ODT command from the plurality of shifted DQS ODT commands using a second value of the set of DQS shift values;
- and
- combining the first and second shifted DQ ODT commands to form a shifted DQS ODT command;
- and
- performing the read operation using the shifted DQ ODT command and the shifted DQS ODT command to de-assert ODT respectively on the data pin and the data strobe pin during the read operation.
12 more elements
Dependencies are inferred from the claim text.