Nonvolatile memory device, operating method thereof, and data storage apparatus including the same
AssigneeSK hynix Inc.
InventorDo Hyun KIM
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device includes a memory cell array, a page buffer including a first latch configured to store data to be programmed in a first state, a second latch configured to store the data in a second state, and a third latch configured to store the data in a third state when the data is received from an external apparatus, and a control logic configured to control the page buffer to store the data of the first state in the first latch, the data of the second state in the second latch, and the data of the third state in the third latch when a multi-conversion program command and the data are received from the external apparatus.
Claims19
A nonvolatile memory device comprising:
- a memory cell array;
- a page buffer including a first latch configured to store data to be programmed in a first state, a second latch configured to store the data in a second state, and a third latch configured to store the data in a third state when the data is received from an external apparatus;
- and
- a control logic configured to control the page buffer to store the data of the first state in the first latch, the data of the second state in the second latch, and the data of the third state in the third latch when a multi-conversion program command and the data are received from the external apparatus.
An operating method of a nonvolatile memory device, the method comprising:
- determining whether a multi-conversion program command is received from an external apparatus;
- storing data of a first state in a first latch, data of a second state in a second latch, and data of a third state in a third latch of a page buffer based on data to be programmed received with the multi-conversion program command when the multi-conversion program command is received;
- and
- storing the data of the first state, the data of the second state, and the data of the third state stored in the page buffer in pages of a memory cell corresponding to an address to be programmed.
A data storage apparatus comprising:
- a nonvolatile memory device;
- and
- a controller configured to control an operation of the nonvolatile memory device,
- wherein the nonvolatile memory device includes:
- a memory cell array including a plurality of memory cells, each memory cell configured of a plurality of pages;
- a page buffer including a first latch configured to store data to be programmed in an original state, a second latch configured to store the data in an inverted state, and a third latch configured to store the data in a state XOR-operated with a preset value when the data is received from the controller;
- and
- a control logic configured to control the nonvolatile memory device to store the data of the original state, the data of the inverted state, and the data of the XOR-operated state in pages of a memory cell corresponding to an address to be programmed when a multi-conversion program command is received from the controller.
Dependencies are inferred from the claim text.