Methods for sensitizing photoresist using flood exposures
AssigneeTokyo Electron Limited
InventorsMichael A. Carcasi, Mark H. Somervell, Seiji Nagahara
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AssigneeTokyo Electron Limited
InventorsMichael A. Carcasi, Mark H. Somervell, Seiji Nagahara
Estimating the term…
A patterning method is provided in which a light-sensitive layer is formed, and a target resolution is defined for a pattern to be formed in a target layer. Based on a reference dose and reference LWR that results from a single patterning exposure at an EUV wavelength, the target resolution and reference dose, the light-sensitive layer is subjected to at least two radiation exposures including an EUV patterning exposure at a dose selected to be less than the reference dose and within 15 mJ/cm2-200 mJ/cm2, and a flood exposure at a wavelength of 200 nm-420 nm and a dose of 0.5 J/cm2-20 J/cm2. The light-sensitive layer is then developed to form a mask pattern, which is used to etch the pattern into the target layer with the target resolution and a LWR less than or approximately equal to the reference LWR and ≤5 nm.
A method for forming a pattern on a substrate, comprising:
A method for forming a pattern on a substrate, comprising:
Dependencies are inferred from the claim text.