# US 2019/0094597 A1 · Method of producing metal electrode, array substrate and method of producing the same, display device

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- Number: US 2019/0094597 A1
- Document ID: US20190094597A1
- Status: Published application
- Kind: A1
- Application number: 15/970,803
- Filed: 2018-05-03
- Published: 2019-03-28
- Earliest claimed: 2017-09-27
- Assignees: Boe Technology Group Co., Ltd.; Beijing Boe Display Technology Co., Ltd.
- Applicants: Boe Technology Group Co., Ltd.; Beijing Boe Display Technology Co., Ltd.
- Inventors: Xiaolong Li; Xiaoxiang Zhang; Huibin Guo; Mingxuan Liu; Wenqing Xu; Zumou Wu; Yongzhi Song
- Web page: https://patentgrep.com/patent/US20190094597A1

## CPC

- G02F 1/13439: {characterised by their electrical, optical, physical properties; materials therefor; method of making}
- G02F 1/133553: {Reflecting elements (associated to illuminating devices G02F1/133605)}
- H10D 30/6732: {Bottom-gate only TFTs}
- H10D 30/6737: {characterised by the electrode materials}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 30/6743: {Silicon}
- H10D 30/6746: {Amorphous silicon}
- H10D 86/021: {of multiple TFTs}
- H10D 86/0212: {comprising manufacture, treatment or coating of substrates}
- H10D 86/0231: {using masks, e.g. half-tone masks}
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10P 50/71: {using masks for conductive or resistive materials}
- H10P 76/2041: {Photolithographic processes}
- G02F 2203/02: reflective
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure relates to a metal electrode, an array substrate and a method of producing the same, and a display device. In an embodiment, the method includes: forming a protection layer on a metal layer; patterning the protection layer to form a protection pattern, a profile of the protection pattern being the same as a profile of a predetermined pattern of the metal electrode; and etching a part of the metal layer not covered by the protection pattern to form the metal electrode, the metal electrode being covered by the protection pattern, wherein an etching anisotropy of the protection layer is larger than an etching anisotropy of the metal layer.

## Claims

### Claim 1

A method of producing a metal electrode, comprising:
forming a protection layer on a metal layer;
patterning the protection layer to form a protection pattern, a profile of the protection pattern being the same as a profile of a predetermined pattern of the metal electrode; and
etching a part of the metal layer not covered by the protection pattern to form the metal electrode, the metal electrode being covered by the protection pattern,
wherein an etching anisotropy of the protection layer is larger than an etching anisotropy of the metal layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the step of patterning the protection layer to form a protection pattern comprises:
forming a photoresist layer over the protection layer;
exposing and developing the photoresist layer to form a photoresist pattern, a profile of the photoresist pattern being the same as the profile of the predetermined pattern of the metal electrode; and
etching a part of the protection layer not covered by the photoresist pattern to form the protection pattern, the protection pattern being covered by the photoresist pattern.

### Claim 3 (depends on 2)

The method of claim 2, wherein after the step of etching a part of the metal layer not covered by the protection pattern to form the metal electrode, the metal electrode being covered by the protection pattern, the method further comprises:
removing the photoresist pattern; and
removing the protection pattern.

### Claim 4 (depends on 2)

The method of claim 2, wherein after the step of etching a part of the protection layer not covered by the photoresist pattern to form the protection pattern, the protection pattern being covered by the photoresist pattern, the step of patterning the protection layer to form the protection pattern further comprises:
removing the photoresist pattern.

### Claim 5 (depends on 1)

The method of claim 1, further comprising:
removing the protection pattern to form the metal electrode.

### Claim 6 (depends on 1)

The method of claim 1, wherein before the step of forming the protection layer on the metal layer, the method further comprises:
forming the metal layer on a base substrate.

### Claim 7 (depends on 1)

The method of claim 1, wherein a material of the protection layer comprises indium tin oxide (ITO).

### Claim 8 (depends on 1)

The method of claim 1, wherein the metal electrode comprises at least one of a pixel electrode, a gate electrode, a source electrode, a drain electrode, a gate line, and a data line.

### Claim 9 (depends on 1)

The method of claim 1, wherein a material of the metal layer comprises aluminum, copper, silver, or an alloy thereof.

### Claim 10 (depends on 1)

The method of claim 1, wherein the step of etching a part of the metal layer not covered by the protection pattern comprises: etching the part of the metal layer by a wet etching process.

### Claim 11 (depends on 1)

A method of producing an array substrate, comprising the method of claim 1.

### Claim 12 (depends on 11)

The method of claim 11, further comprising:
forming the metal layer and at least one of a gate electrode, a gate line, a gate insulation layer, an active layer, a source electrode, a drain electrode, a data line, a passivation layer, and a planarization layer on a base substrate,
wherein the metal electrode comprises a pixel electrode.

### Claim 13 (depends on 11)

An array substrate, wherein the array substrate is produced by the method of claim 11.

### Claim 14 (depends on 12)

An array substrate, wherein the array substrate is produced by the method of claim 12.

### Claim 15 (depends on 13)

A display device, comprising the array substrate of claim 13.

### Claim 16

The display device of 15, wherein the display device comprises a reflective display device.