High-resolution power electronics measurements

A method comprising:

• estimating, by an attenuation circuit, a drain voltage of a high voltage transistor while the high voltage transistor is turned on;
• sensing, by a current sense circuit, a current conducted by the high voltage transistor while the high voltage transistor is turned on;
• determining a first slope of the estimated drain voltage over a time period;
• determining a second slope of the sensed current over the time period;
• and
• determining an on-state impedance value of the high voltage transistor based on a ratio of the first slope over the second slope.

A device comprising:

• a high voltage transistor having a drain terminal, a source terminal, and a gate terminal;
• a clamp transistor having a drain terminal coupled to the drain terminal of the high voltage transistor, a source terminal isolated from the source terminal of the high voltage transistor, and a gate terminal isolated from the gate terminal of the high voltage transistor;
• and
• a Zener diode having an anode coupled to a ground reference terminal, and a cathode coupled to the source terminal of the clamp transistor.

A device comprising:

• a gallium nitride (GaN) transistor having a drain terminal, a source terminal, and a gate terminal;
• a clamp transistor having a drain terminal coupled to the drain terminal of the GaN transistor, a source terminal isolated from the source terminal of the GaN transistor, and a gate terminal isolated from the gate terminal of the GaN transistor;
• and
• a Zener diode having an anode coupled to a ground reference terminal, and a cathode coupled to the source terminal of the clamp transistor.