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US 2019/0094180 A1Published application
Membrane Device, Measurement Device, and Method for Producing Membrane Device
AssigneeHitachi, Ltd.
InventorItaru YANAGI
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Abstract
The present invention provides a membrane device having a configuration capable of reducing the frequency of clogging of a sample in a nanopore when the sample passes through the nanopore. In the membrane device according to the present invention, a membrane and a semiconductor layer are stacked on a Si substrate, and an insulating film is formed on a side wall of a through hole included in the semiconductor layer.
Claims14
A membrane device comprising:
- a Si substrate;
- a membrane disposed on the Si substrate;
- and
- a semiconductor layer which is formed of polysilicon or amorphous silicon and is disposed on the membrane,
- wherein the semiconductor layer includes a first hole penetrating to a depth reaching the membrane,
- wherein the Si substrate includes a second hole penetrating to a depth reaching the membrane,
- wherein the membrane is disposed in a position where the first hole and the second hole are separated from each other by the membrane, and
- wherein a first insulating film is disposed on a side wall of the first hole.
5 more elements
A measuring device that measures physical properties of a sample, the measuring device comprising:
- a measuring unit that accommodates the sample;
- first and second chambers;
- a first electrode that applies a voltage to an aqueous solution accommodated in the first chamber;
- and
- a second electrode that applies a voltage to an aqueous solution accommodated in the second chamber,
- wherein the measuring unit includes
- a Si substrate,
- a membrane disposed on the Si substrate, and
- a semiconductor layer which is formed of polysilicon or amorphous silicon and is disposed on the membrane,
- wherein the semiconductor layer includes a first hole penetrating to a depth reaching the membrane,
- wherein the Si substrate includes a second hole penetrating to a depth reaching the membrane,
- wherein the membrane is disposed in a position where the first hole and the second hole are separated from each other by the membrane, and
- wherein a first insulating film is disposed on a side wall of the first hole.
10 more elements
A method of manufacturing a membrane device, the method comprising:
- stacking a membrane on a Si substrate;
- stacking a semiconductor layer formed of polysilicon or amorphous silicon on the membrane;
- forming a first hole penetrating to a depth reaching the membrane on the semiconductor layer;
- and
- forming a second hole penetrating to the depth reaching the membrane on the Si substrate,
- wherein the membrane is disposed in a position where the first hole and the second hole are separated from each other by the membrane,
- the method further comprising forming a first insulating film on a side wall of the first hole.
4 more elements
Dependencies are inferred from the claim text.