Sensing device and ion detection method
AssigneeNational Tsing Hua University
InventorsYu-Lin Wang, Yi-Ting Chen, Revathi Sukesan
Life of this patent
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Abstract
A sensing device including a transistor, at least one response electrode, and a selective membrane is provided. The transistor includes a gate end, a source end, a drain end, and a semiconductor layer, wherein the source end and the drain end are located on the semiconductor layer, and the gate end is located between the source end and the drain end. The at least one response electrode is disposed opposite to the gate end of the transistor and spaced apart from the transistor. The selective membrane is located on the at least one response electrode or on the transistor.
Claims17
A sensing device, comprising:
- a transistor, comprising a gate end, a source end, a drain end, and a semiconductor layer, wherein the source end and the drain end are located on the semiconductor layer, and the gate end is located between the source end and the drain end;
- at least one response electrode, disposed opposite to the gate end of the transistor and spaced apart from the transistor;
- and
- a selective membrane, located on the at least one response electrode or on the transistor.
An ion detection method, comprising:
- providing a sensing device, wherein the sensing device comprises a transistor, at least one response electrode and an ion selective membrane, the at least one response electrode is disposed opposite to the gate end of the transistor and spaced apart from the transistor, and the ion selective membrane is formed on the at least one response electrode or on the transistor;
- placing a test solution onto the ion selective membrane;
- and
- applying a voltage to the at least one response electrode to generate an electric field between the at least one response electrode and the gate end of the transistor, and measuring a current generated from the transistor to obtain an ion content of the test solution.
Dependencies are inferred from the claim text.