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US 2019/0090338 A1Published application
Substrate support with electrically floating power supply
AssigneeApplied Materials, Inc.
InventorsTravis Lee KOH, Haitao WANG, Philip Allan KRAUS, Vijay D. PARKHE, Daniel DISTASO, Christopher A. ROWLAND, Mark MARKOVSKY, Robert CASANOVA
Life of this patent
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Abstract
Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.
Claims20
A processing method, comprising:
- electrically coupling a first DC power source to a chucking electrode embedded in a substrate support assembly, the substrate support assembly comprising a substrate support formed of a dielectric material and a support base, wherein the substrate support assembly is disposed in a processing volume of a processing chamber;
- electrically coupling a second DC power source to a plurality of conductive elements disposed in the substrate support and extending from a substrate support surface thereof;
- electrically coupling a first DC power from the first DC power source to a reference voltage contact of the second DC power source;
- applying the first DC power from the first DC power source to the chucking electrode;
- and
- applying a second DC power from the second DC power source to the plurality of conductive elements.
3 more elements
A processing method, comprising:
- forming a plasma in the plasma processing chamber by flowing a gas to a volume therein and above the substrate support and applying a plasma power to a plasma electrode facing the substrate support;
- electrically coupling a first DC power source to a chucking electrode embedded in a dielectric material of a substrate support, wherein the substrate support is disposed on, and is thermally coupled to a support base, and wherein the substrate support and the support base are disposed in a plasma processing chamber;
- electrically coupling a second DC power source to a plurality of conductive pins disposed in the substrate support and extending from a surface thereof;
- electrically coupling a first DC power from the first DC power source to a reference voltage contact of the second DC power source;
- applying the first DC power from the first DC power source to the chucking electrode;
- and
- applying a second DC power from the second DC power source to the plurality of conductive pins, the second DC power comprising a pulsed DC power having a frequency between about 10 Hz and about 100 kHz.
4 more elements
A plasma processing apparatus, comprising:
- a processing chamber, comprising:
- one or more sidewalls and a bottom defining a processing volume;
- a substrate support assembly disposed in the processing volume, the substrate support assembly comprising:
- a support base;
- a substrate support formed of a dielectric material disposed on the support base and thermally coupled thereto;
- a chucking electrode embedded in the substrate support;
- and
- a plurality of conductive elements disposed in the substrate support and extending from a surface thereof;
- and
- a plasma generator disposed in the processing volume facing the substrate support;
- a first power conduit configured to electrically couple the chucking electrode to a first DC power source;
- a second power conduit configured to electrically couple the plurality of conductive elements to a second DC power source;
- and
- a third power conduit configured to electrically couple the plasma generator to a plasma power source.
11 more elements
Dependencies are inferred from the claim text.