Nitride semiconductor device
AssigneeWavetek Microelectronics Corporation
InventorsChih-Yen Chen, Hsien-Lung Yang
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Abstract
A nitride semiconductor device is disclosed. A substrate is provided. A nitride semiconductor layer is disposed on the substrate. An AlN anode dielectric layer is disposed on the nitride semiconductor layer. An anode metal layer is disposed on the AlN anode dielectric layer. A fluorinated region is disposed in the AlN anode dielectric layer. The fluorinated region extends into the nitride semiconductor layer.
Claims32
A high electron mobility transistor, comprising:
- a substrate;
- a channel layer disposed on the substrate;
- a nitride semiconductor layer disposed on the channel layer;
- a fluorinated anode structure disposed on the nitride semiconductor layer,
- wherein the fluorinated anode structure comprises an AlN anode dielectric layer on the nitride semiconductor layer, a fluorinated region in the AlN anode dielectric layer, and an anode metal layer disposed on the AlN anode dielectric layer, wherein an overlapping region between the AlN anode dielectric layer and the fluorinated region comprises atomic bonding of AlFx and atomic bonding of NFx;
- and
- a cathode structure disposed on the nitride semiconductor layer and in proximity to the fluorinated anode structure.
2-3. (canceled)
A high electron mobility transistor, comprising:
- a substrate;
- a channel layer disposed on the substrate;
- a nitride semiconductor layer disposed on the channel layer;
- a fluorinated anode structure disposed on the nitride semiconductor layer, wherein the fluorinated anode structure comprises an AlN anode dielectric layer on the nitride semiconductor layer, a GaN cap layer on the AlN anode dielectric layer, a fluorinated region in the AlN anode dielectric layer and the GaN cap layer, and an anode metal layer disposed on the GaN cap layer;
- and
- a cathode structure disposed on the nitride semiconductor layer and in proximity to the fluorinated anode structure.
A high electron mobility transistor, comprising:
- a substrate;
- a channel layer disposed on the substrate;
- a nitride semiconductor layer disposed on the channel layer;
- a fluorinated anode structure disposed on the nitride semiconductor layer, wherein the fluorinated anode structure comprises an AlN anode dielectric layer on the nitride semiconductor layer, a SiN cap layer on the AlN anode dielectric layer, a fluorinated region in the AlN anode dielectric layer and the SiN cap layer, and an anode metal layer disposed on the SiN cap layer;
- and
- a cathode structure disposed on the nitride semiconductor layer and in proximity to the fluorinated anode structure.
A nitride semiconductor device, comprising:
- a substrate;
- a nitride semiconductor layer disposed on the substrate;
- an AlN anode dielectric layer disposed on the nitride semiconductor layer;
- an anode metal layer disposed on the AlN anode dielectric layer;
- and
- a fluorinated region disposed in the AlN anode dielectric layer and extending into the nitride semiconductor layer, wherein an overlapping region between the AlN anode dielectric layer and the fluorinated region comprises atomic bonding of AlFx and atomic bonding of NFx.
31-32. (canceled)
Dependencies are inferred from the claim text.