High-voltage tolerant level shifter using thin-oxide transistors and a middle-of-the-line (mol) capacitor

A method of forming a level shifter using thin-oxide technologies, comprising:

• forming a middle-of-the-line (MOL) capacitor;
• forming a circuit with one or more thin-film transistors;
• and
• coupling the MOL capacitor to the circuit such that an input voltage provided at the MOL capacitor is split between the MOL capacitor and the circuit.

An integrated circuit, comprising

• a level shifter coupled to an input pad to receive an input voltage, the level shifter comprising:
• a middle-of-the-line (MOL) capacitor;
• and
• a circuit including at least one thin-film transistor coupled to the MOL capacitor,
• wherein the input voltage is split between the MOL capacitor and the circuit.

A device comprising:

• at least one integrated circuit that includes a level shifter coupled to an input pad to receive an input voltage, the level shifter including
• a middle-of-the-line (MOL) capacitor;
• and
• a circuit including at least one thin-film transistor coupled to the MOL capacitor,
• wherein the input voltage is split between the MOL capacitor and the circuit.