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US 2019/0058451 A1Published application
Bulk acoustic wave resonator
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsTae Kyung LEE, Ran Hee SHIN, Je Hong KYOUNG, Hwa Sun LEE, Jin Suk SON, Sung Sun KIM
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Abstract
A bulk acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the lower electrode; and an upper electrode disposed on the piezoelectric layer, wherein either one or both of the lower electrode and the upper electrode includes a layer of aluminum alloy including scandium (Sc).
Claims29
A bulk acoustic wave resonator, comprising:
- a substrate;
- a lower electrode disposed on the substrate;
- a piezoelectric layer disposed on the lower electrode;
- and
- an upper electrode disposed on the piezoelectric layer,
- wherein either one or both of the lower electrode and the upper electrode comprises a layer of aluminum alloy including scandium (Sc).
3 more elements
A bulk acoustic wave resonator, comprising:
- a lower electrode disposed on a piezoelectric layer;
- and
- an upper electrode disposed on the piezoelectric layer,
- wherein either one or both of the lower electrode and the upper electrode is formed of a material comprising a lower acoustic impedance than molybdenum (Mo) and a mechanical strength greater than 35 MPa.
1 more element
A bulk acoustic wave resonator, comprising:
- a lower electrode comprising a first lower electrode layer disposed on a substrate, and a second lower electrode layer disposed on top of the first lower electrode layer;
- a piezoelectric layer disposed on top of the lower electrode;
- and
- an upper electrode disposed on top of the piezoelectric layer,
- wherein one of the first and second lower electrode layers is formed of an aluminum alloy including scandium (Sc), and the other of the first and second lower electrode layers is formed of a material other than the aluminum alloy including scandium (Sc).
2 more elements
Dependencies are inferred from the claim text.