Asymmetrical parallel-combining (apc) technique for rf power amplifier

Abstract

An integrated circuit RF power amplifier that includes a substrate; a low power (LP) amplifier; a high-power (HP) amplifier; and an asymmetrical parallel-combining transformer. The substrate is configured to supports the LP amplifier, the HP amplifier and the asymmetrical parallel-combining transformer. The LP amplifier is configured to amplify a LP RF input signal to provide a LP amplified signal. The HP amplifier is configured to amplify a HP RF input signal to provide a HP amplified signal. The HP amplified signal has maximal intensity that exceeds a maximal intensity of the LP amplified signal. The wherein the asymmetrical parallel-combining transformer may include (a) a HP primary winding that is constructed and arranged to receive the HP amplified signal; (b) LP primary windings that are constructed and arranged to receive the LP amplified signal; and (c) secondary windings that are magnetically coupled to the HP primary winding and to the LP primary windings, and are constructed and arranged to output a output signal.

Dependencies are inferred from the claim text.