Encapsulation structure for transparent flexible organic electronic device
AssigneeKorea Advanced Institute of Science and Technology
InventorsKyung Cheol CHOI, Jeong Hyun KWON
Life of this patent
Estimating the term…
Abstract
Provided is an encapsulation structure for a transparent flexible organic electronic device, the encapsulation structure including a flexible substrate, and at least one hybrid unit structure provided on at least one surface of the flexible substrate and including a zinc oxide thin film, an aluminum oxide thin film, and a magnesium oxide thin film stacked on one another.
Claims20
An encapsulation structure for a transparent flexible organic electronic device, the encapsulation structure comprising:
- a flexible substrate;
- and
- at least one hybrid unit structure provided on at least one surface of the flexible substrate and comprising a zinc oxide thin film, an aluminum oxide thin film, and a magnesium oxide thin film stacked on one another.
An encapsulation structure for a transparent flexible organic electronic device, the encapsulation structure comprising:
- a flexible substrate;
- and
- at least one hybrid unit structure provided on at least one surface of the flexible substrate and comprising a stress relief film, a barrier film, and a moisture absorbing film stacked on one another,
- wherein, in the at least one hybrid unit structure, the stress relief film, the barrier film, and the moisture absorbing film individually have pinholes, and have a pinhole decoupling structure in which the pinholes of adjacent thin films among the stress relief film, the barrier film, and the moisture absorbing film are misaligned.
A method of manufacturing an encapsulation structure for a transparent flexible organic electronic device, the method comprising:
- generating, on at least one surface of a flexible substrate, at least one hybrid unit structure comprising a zinc oxide thin film, an aluminum oxide thin film, and a magnesium oxide thin film stacked on one another,
- wherein the zinc oxide thin film is generated using atomic layer deposition (ALD), chemical vapor deposition (CVD), molecular layer deposition (MLD), or physical vapor deposition (PVD),
- wherein the aluminum oxide thin film is generated using ALD, CVD, MLD, or PVD, and
- wherein the magnesium oxide thin film is generated using ALD, CVD, MLD, or PVD.
Dependencies are inferred from the claim text.