Cem switching device
AssigneeArm Limited
InventorsKimberly Gay REID, Lucian SHIFREN, Carlos Alberto PAZ de ARAUJO, Jolanta Bozena CELINSKA
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Abstract
Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.
Claims21
A method for the manufacture of a CEM switching device, which method comprises forming a conductive substrate and forming a layer of correlated electron material (CEM) on or over the conductive substrate, wherein the forming of the CEM layer comprises forming a layer of a correlated electron material comprising a doped metal compound of a d- or f-block element comprising ions of the same d- or f-block element in different oxidation states and less than 5 atom % of free d- or f-block element, the free d- or f-block element being unbound and in a zero oxidation state.
A method for the manufacture of a CEM switching device, which method comprises forming a layer of correlated electron material (CEM) on a substrate and forming a conductive overlay on the CEM layer, wherein the forming of the CEM layer comprises forming a layer of a correlated electron material comprising a doped metal compound of a d- or f-block element comprising ions of the same d- or f-block element in different oxidation states and less than 5 atom % of free d- or f-block element, the free d- or f-block element being unbound and in a zero oxidation state.
Dependencies are inferred from the claim text.