Spin orbit materials for efficient spin current generation
AssigneeNational University of Singapore
InventorsRajagopalan Ramaswamy, Yi Wang, Shuyuan Shi, Hyunsoo Yang
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Abstract
In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., Bi2Se3, BixSe1-x, Bi1-xSbx, etc.) or a TI/non-magnetic metal (e.g., Bi2Se3/Ag, BixSe1-x/Ag, Bi1-xSbx/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.
Claims20
A spin-orbit torque (SOT) device, the SOT device comprising:
- a magnetic layer;
- and
- a non-magnetic layer (NM) layer adjacent to the magnetic layer that is configured to generate spin current that diffuses into the magnetic layer, the NM layer including a complimentary metal oxide semiconductor (CMOS)-compatible composite alloy, a topological insulator (TI) or a TI/non-magnetic metal interface.
A spin-orbit torque (SOT) device, the SOT device comprising:
- a magnetic layer;
- and
- a non-magnetic layer (NM) layer adjacent to the magnetic layer that is configured to generate spin current that diffuses into the magnetic layer, the NM layer including CuPt alloy;
- Bi2Se3, BixSe1-x, or Bi1-xSbx;
- or a Bi2Se3/Ag, BixSe1-x/Ag, or Bi1-xSbx/Ag interface.
A method for operating a spin-orbit torque (SOT) device, the SOT device having a magnetic layer and a non-magnetic layer (NM) layer adjacent to the magnetic layer, the method comprising:
- applying an in-plane current to the SOT device;
- and
- in response to the in-plane current, generating a spin current in the NM layer that diffuses into the magnetic layer,
- wherein the generating the spin current is performed by extrinsic spin Hall effect (SHE) of nonmagnetic impurities in a composite alloy, spin-momentum-locked surface states (TSS) of a topological insulator (TI) or Rashba effect of a TI/non-magnetic metal interface in the NM layer.
Dependencies are inferred from the claim text.