Spin orbit torque-based spintronic devices using l10- ordered alloys
AssigneeNational University of Singapore
InventorsJingsheng Chen, Liang Liu, Jinyu Deng
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Abstract
In one embodiment, a SOT device provides current-induced perpendicular magnetization switching in a single magnetic layer, such as a L10-ordered magnetic alloy layer of FePt alloy, CoPt alloy, FePd alloy or another atomically layered magnetic alloy. The SOT may originate from the large spin orbit coupling in these alloys. Depending on the implementation, the SOT device may take the form of a SOT-MRAM, a spin memristor, a current-assisted magnetic recording media, or other type of device.
Claims20
A spin-orbit torque (SOT) device comprising:
- a substrate defining a plane;
- and
- an L10-ordered magnetic alloy layer parallel to the substrate, the L10-ordered magnetic alloy layer having a perpendicular magnetization direction that is switchable via SOT in response to application of an in-plane current to the SOT device.
A spin-orbit torque (SOT) device comprising:
- a substrate;
- and
- a single magnetic layer of iron-platinum (FePt) alloy, cobalt-platinum (CoPt) alloy or iron-palladium (FePd) alloy, the single magnetic layer having a magnetization direction that is switchable via SOT in response to application of a current to the SOT device.
A method for switching a spin-orbit torque (SOT) device that includes an L10-ordered magnetic alloy layer parallel to a substrate that defines a plane, comprising:
- applying an in-plane current to the SOT device;
- and
- in response to the in-plane current causing nonequilibrium spin accumulation, exerting torque on magnetic moments of the L10-ordered magnetic alloy layer to switch a perpendicular magnetization direction of the L10-ordered magnetic alloy layer.
Dependencies are inferred from the claim text.