Electrically conductive–semitransparent solid state infrared emitter apparatus and method of use thereof

A method, comprising the steps of:

• providing a solid state source, comprising:
• an electrically conductive film, comprising a semi-transparent material;
• transmitting at least forty percent of internal infrared emissions from a center of said semi-transparent material to an outer surface of said electrically conductive film,
• wherein the infrared emissions comprise a peak intensity between 3.9 and 6 micrometers.

An apparatus, comprising:

• a solid state source, comprising:
• a semi-transparent electrically conductive film, comprising a transmission property of at least forty percent, wherein in said transmission property at least forty percent of internal infrared emissions from said semi-transparent electrically conductive film transmit to an outer surface of said semi-transparent electrically conductive film, wherein the infrared emissions comprise a peak intensity between 3.9 and 6 micrometers;
• a first silicon nitride layer;
• a second silicon nitride layer, said semi-transparent electrically conductive film positioned between said first silicon nitride layer and said second silicon nitride layer;
• a first electrical contact on a first end of said semi-transparent electrically conductive film;
• and
• a second electrical contact on a second end of said semi-transparent electrically conductive film,
• wherein, upon applying an electric current of less than one Watt, during use, from said first electrical contact, though said semi-transparent electrically conductive film, and to said second electrical contact, said semi-transparent electrically conductive film rises from within one hundred degrees centigrade of room temperature to in excess of five hundred degrees centigrade in less than twenty milliseconds.

A method, comprising the steps of:

• providing a solid state source, comprising:
• a semi-transparent electrically conductive film comprising a transmission property of at least forty percent, wherein at least forty percent of internal infrared emissions from a center of said semi-transparent electrically conductive film transmit to an outer surface of said semi-transparent electrically conductive film, wherein the infrared emissions comprise a peak intensity between 3.9 and 6 micrometers;
• a first silicon nitride layer;
• a second silicon nitride layer, said semi-transparent electrically conductive film positioned between said first silicon nitride layer and said second silicon nitride layer;
• a first electrical contact on a first end of said semi-transparent electrically conductive film;
• and
• a second electrical contact on a second end of said semi-transparent electrically conductive film;
• and
• applying an electric current of less than one Watt from said first electrical contact, though said semi-transparent electrically conductive film, and to said second electrical contact, said semi-transparent electrically conductive film rising from within one hundred degrees centigrade of room temperature to in excess of eight hundred degrees centigrade in less than twenty milliseconds.