Micro light-emitting diode (led) elements and display
AssigneeIntel Corporation
InventorsKhaled Ahmed, Anup Pancholi, Ali Khakifirooz
Life of this patent
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Abstract
Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a first color nanowire LED, a second color nanowire LED, the second color different than the first color, and a pair of third color nanowire LEDs, the third color different than the first and second colors. A continuous insulating material layer ius laterally surrounding the first color nanowire LED, the second color nanowire LED, and the pair of third color nanowire LEDs.
Claims20
A pixel element for a micro-light emitting diode (LED) display panel, the pixel element comprising:
- a first color nanowire LED;
- a second color nanowire LED, the second color different than the first color;
- a pair of third color nanowire LEDs, the third color different than the first and second colors;
- a continuous insulating material layer laterally surrounding the first color nanowire LED, the second color nanowire LED, and the pair of third color nanowire LEDs;
- and
- a contact metal over the first color nanowire LED, over the second color nanowire LED, and over the pair of third color nanowire LEDs, the contact metal having a surface co-planar with a surface of the insulating material layer.
A red-emitting diode structure, comprising:
- a GaN nanowire above a substrate;
- an InGaN shell layer on the GaN nanowire;
- and
- an InGaN active layer on the InGaN shell layer, wherein the InGaN active layer has a greater concentration of In than the InGaN shell layer.
A red-emitting diode structure, comprising:
- an InGaN nanowire above a substrate;
- and
- an InGaN active layer on the InGaN nanowire, wherein the InGaN active layer has a greater concentration of In than the InGaN nanowire.
Dependencies are inferred from the claim text.