Receiver unit

A receiver unit having an optically operated voltage source, the receiver unit comprising:

• a first stack having an upper side and an underside and being formed on an upper side of a non-Si substrate based on III-V semiconductor layers arranged in a shape of a stack;
• a first electrical terminal contact disposed on an underside of the non-Si substrate,
• a second electrical terminal contact disposed on the upper side of the first stack, a voltage being generated via incident light on the upper side of the first stack that is disposed between the two terminal contacts;
• and
• a second stack having a FET transistor structure comprising III-V semiconductor layers that include a control terminal and a drain terminal and a source terminal,
• wherein the FET transistor structure is a depletion field effect transistor,
• wherein the control terminal is connected to one of the two terminal contacts, and the drain terminal is connected to the other of the two terminal contacts, and
• wherein the field effect transistor short-circuits the two terminal contacts if the generated voltage drops below a threshold value.