Photodetection element
AssigneeHamamatsu Photonics K.K.
InventorsHiroyasu FUJIWARA, Wei DONG, Kazutoshi NAKAJIMA, Shohei HAYASHI
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AssigneeHamamatsu Photonics K.K.
InventorsHiroyasu FUJIWARA, Wei DONG, Kazutoshi NAKAJIMA, Shohei HAYASHI
Estimating the term…
A photodetection element is a photodetection element having an incidence surface for light on a back surface of a semiconductor layer, and includes a periodic nano-concave/convex structure provided on a front surface of the semiconductor layer and having convex portions and concave portions constituting a longitudinal resonator and a transverse resonator for the light incident from the incidence surface, the periodic nano-concave/convex structure converting the light into surface plasmons, and a metal film provided to cover the periodic nano-concave/convex structure, a height and an arrangement pitch of the convex portions in the periodic nano-concave/convex structure are set such that a resonance wavelength of the longitudinal resonator and a resonance wavelength of the transverse resonator match, and a thickness of the metal film is equal to or greater than 20 nm.
A photodetection element having a light incidence surface on one side of a semiconductor layer, the photodetection element comprising:
Dependencies are inferred from the claim text.