Semiconductor device including non-monocrystalline stringer adjacent a superlattice-sti interface

A semiconductor device comprising:

• a semiconductor substrate and first and second spaced apart shallow trench isolation (STI) regions therein;
• a superlattice on the semiconductor substrate and extending between the first and second STI regions, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
• a first semiconductor stringer comprising a non-monocrystalline body at an interface between a first end of the superlattice and the first STI region;
• a second semiconductor stringer adjacent an interface between a second end of the superlattice and the second STI region;
• and
• a gate above the superlattice;
• the semiconductor substrate and superlattice including dopants therein to define spaced apart source and drain regions.

A semiconductor device comprising:

• a semiconductor substrate and first and second spaced apart shallow trench isolation (STI) regions therein;
• a superlattice on the semiconductor substrate and extending between the first and second STI regions, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions;
• a first semiconductor stringer comprising a non-monocrystalline body at an interface between a first end of the superlattice and the first STI region, the first semiconductor stringer being above the superlattice;
• and
• a gate above the superlattice.