TRENCH-GATE INSULATED-GATE BIPOLAR TRANSISTORS (IGBTs) AND METHODS OF MANUFACTURE
AssigneeSemiconductor Components Industries, LLC
InventorsMingjiao Liu, Shamsul Arefin Khan, Gordon M. Grivna, Meng-Chia Lee, Ralph N. Wall
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Abstract
In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT device can also include a first mesa defined by a first sidewall of the trench and in parallel with the trench and a second mesa defined by a second sidewall of the trench and in parallel with the trench. The first mesa can include at least one active segment of the IGBT device and the second mesa can include at least one inactive segment of the IGBT device.
Claims20
An insulated gate bipolar transistor (IGBT) device, comprising:
- an active region;
- an inactive region;
- a trench extending along a longitudinal axis in the active region;
- a first mesa defined by a first sidewall of the trench and in parallel with the trench;
- and
- a second mesa defined by a second sidewall of the trench and in parallel with the trench,
- the first mesa including at least one active segment of the IGBT device, and
- the second mesa including at least one inactive segment of the IGBT device.
An insulated gate bipolar transistor (IGBT) device, comprising:
- an inactive region;
- and
- a plurality of interconnected active regions distributively disposed within the inactive region,
- an active region of the plurality of active regions including:
- a trench extending along a longitudinal axis, a first sidewall of the trench being defined by an active mesa of the active region, and a second sidewall of the trench being defined by the inactive region.
An insulated gate bipolar transistor (IGBT) device, comprising:
- a dielectric termination region;
- an active emitter mesa disposed within the dielectric termination region;
- and
- a trench extending along a longitudinal axis, a first sidewall of the trench being defined by the active emitter mesa, and a second sidewall of the trench being defined by the dielectric termination region.
Dependencies are inferred from the claim text.