TRENCH-GATE INSULATED-GATE BIPOLAR TRANSISTORS (IGBTs) AND METHODS OF MANUFACTURE
AssigneeSemiconductor Components Industries, LLC
InventorsMeng-Chia LEE, Ralph N. WALL, Mingjiao LIU, Shamsul Arefin KHAN, Gordon M. GRIVNA
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Abstract
In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT can also include a first mesa defining a first sidewall of the trench and in parallel with the trench and a second mesa defining a second sidewall of the trench and in parallel with the trench. At least a portion of the first mesa can include an active segment of the IGBT device, and at least a portion of the second mesa can include an inactive segment of the IGBT device.
Claims20
An insulated gate bipolar transistor (IGBT) device, comprising:
- an active region;
- an inactive region;
- a trench extending along a longitudinal axis in the active region;
- a first mesa defining a first sidewall of the trench and in parallel with the trench;
- and
- a second mesa defining a second sidewall of the trench and in parallel with the trench,
- at least a portion of the first mesa including an active segment of the IGBT device, and
- at least a portion of the second mesa including an inactive segment of the IGBT device.
An insulated gate bipolar transistor (IGBT) device, comprising:
- an active region;
- an inactive region;
- a trench extending along a longitudinal axis in the active region;
- a first mesa defining a first sidewall of the trench and in parallel with the trench;
- a second mesa defining a second sidewall of the trench and in parallel with the trench;
- a first active segment of the IGBT device included in a first portion of the first mesa;
- a first inactive segment of the IGBT device included in a second portion of the first mesa;
- a second active segment of the IGBT device included in a first portion of the second mesa;
- and
- a second inactive segment of the IGBT device included in a second portion of the second mesa.
An insulated gate bipolar transistor (IGBT) device, comprising:
- an active region;
- an inactive region;
- a trench extending along a longitudinal axis in the active region;
- a first inhomogeneous mesa defining a first sidewall of the trench and in parallel with the trench;
- and
- a second inhomogeneous mesa defining a second sidewall of the trench and in parallel with the trench.
Dependencies are inferred from the claim text.