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US 2019/0058050 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsTe-Chang Hsu, Chun-Chia Chen, Yao-Jhan Wang, Chun-Jen Huang
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; forming a first contact etch stop layer (CESL) around the spacer; forming a mask layer on the first CESL; removing part of the mask layer; removing part of the first CESL; forming a second CESL on the mask layer and the gate structure; and removing part of the second CESL.
Claims20
A method for fabricating semiconductor device, comprising:
- forming a gate structure on a substrate;
- forming a spacer around the gate structure;
- forming a first contact etch stop layer (CESL) around the spacer, and
- forming a second CESL around the spacer and on the first CESL.
1 more element
A semiconductor device, comprising:
- a gate structure on a substrate;
- a spacer around the gate structure;
- a first contact etch stop layer (CESL) around the spacer;
- and
- a second CESL around the spacer and on the first CESL, wherein a bottommost surface of the second CESL contacts a topmost surface of the first CESL directly.
2 more elements
Dependencies are inferred from the claim text.