Fin-type fet with low source or drain contact resistance
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Juntao Li, Heng Wu, Peng Xu
Life of this patent
Estimating the term…
Abstract
Embodiments of the invention are directed to methods of forming a FinFET. A non-limiting example method includes forming a fin across from a major surface of a substrate. A dummy gate is formed around a channel region of the fin. A source region or a drain region is formed on the fin, and the dummy gate is replaced with a metal gate structure. Subsequent to replacing the dummy gate with the metal gate structure, dopants are inserted into the source region or the drain region.
Claims13
1-7. (canceled)
A method of forming fin-type field effect transistors (FinFETs), the method comprising:
- forming a substrate comprising a major surface having a first region and a second region;
- forming a first fin across from the first region of the major surface of the substrate;
- forming a second fin across from the second region of the major surface of the substrate;
- forming a first dummy gate around a first channel region of the first fin;
- forming a second dummy gate around a second channel region of the second fin;
- forming a first interlayer dielectric (ILD) over the first region, wherein the first ILD comprises a first dielectric material;
- forming a second source region or a second drain region on the second fin;
- forming a second ILD over the second region, wherein the second ILD comprises a second dielectric material that is different from the first dielectric material;
- removing the first ILD from over the first region;
- forming a first source region or a first drain region on the first fin;
- replacing the first dummy gate with a first metal gate structure;
- and
- replacing the second dummy gate with a second metal gate structure.
Dependencies are inferred from the claim text.