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US 2019/0058032 A1Published application
Semiconductor device with improved field layer
AssigneeMicrosemi Corporation
InventorsAmaury Gendron-Hansen, Bruce Odekirk, Nathaniel Berliner, Dumitru Sdrulla
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Abstract
A semiconductor device constituted of: a semiconductor layer; and a field layer patterned on said semiconductor layer, said field layer constituted of material having characteristics which block diffusion of mobile ions and maintain structural integrity at activation temperatures of up to 1200 degrees centigrade.
Claims24
A semiconductor device comprising:
- a semiconductor layer;
- and
- a field layer patterned on said semiconductor layer, said field layer constituted of material having characteristics which:
- block diffusion of mobile ions;
- and
- maintain structural integrity at processing temperatures of up to 1200 degrees centigrade.
3 more elements
A semiconductor device fabrication method, the method comprising:
- patterning a field layer on a first face of a semiconductor layer, the field layer constituted of material having characteristics which block diffusion of mobile ions;
- depositing at least one doped well in the semiconductor layer;
- and
- activating said at least one doped well,
- wherein said field layer material characteristics maintain structural integrity at said processing temperatures of up to 1200 degrees centigrade.
2 more elements
Dependencies are inferred from the claim text.