Carrier for a semiconductor structure
AssigneesSoitec, Centre National De La Recherche Scientifique, Universite Claude Bernard Lyon 1
InventorsChristophe Figuet, Oleg Kononchuk, Kassam Alassaad, Gabriel Ferro, Véronique Souliere, Christelle Veytizou, Taguhi Yeghoyan
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Abstract
A support for a semiconductor structure includes a charge-trapping layer on a base substrate. The charge-trapping layer consists of a polycrystalline main layer and, interposed in the main layer or between the main layer and the base substrate, at least one intermediate polycrystalline layer composed of a silicon and carbon alloy or carbon. The intermediate layer has a resistivity greater than 1000 ohm·cm.
Claims20
A support for a semiconductor structure comprising a charge-trapping layer disposed on a base substrate, wherein the charge-trapping layer consists of a polycrystalline main layer and, interposed in the main layer or between the main layer and the base substrate, at least one intermediate layer composed of a silicon and carbon alloy or carbon, the intermediate layer having a resistivity greater than 1000 ohm·cm.
Dependencies are inferred from the claim text.