Organic light emitting diode display panel and method for manufacturing same

An organic light emitting diode (OLED) display panel, comprising:

• a substrate;
• and
• a thin film transistor layer, a first insulating layer, a first electrode layer, a second insulating layer, a light emitting layer, a second electrode layer, a barrier layer, an auxiliary electrode layer, and a planarization layer arranged on the substrate in sequence;
• wherein the first electrode layer comprises a plurality of first electrodes arranged in an array, the second electrode layer comprises a plurality of second electrodes arranged in an array, the first electrodes and the second electrodes are aligned with each other, and the auxiliary electrode layer comprises rows of auxiliary electrodes, each row of the auxiliary electrodes is corresponding to and electrically connected with a row of the second electrodes.

A method for manufacturing an organic light emitting diode (OLED) display panel, comprising steps of:

• providing a substrate and forming a thin film transistor layer on the substrate, wherein the substrate comprises a plurality of thin film transistors spaced from each other;
• forming a first insulating layer on the thin film transistor layer and forming a first through hole corresponding to the thin film transistors on the first insulating layer, respectively;
• forming a first electrode layer on the first insulating layer, wherein the first electrode layer comprises a plurality of first electrodes arranged in an array, the first electrodes and the thin film transistors are aligned with each other, and the first electrode is in contact with the thin film transistor layer through the first through hole;
• forming a second insulating layer on the first electrode layer and forming a second through hole corresponding to the thin film transistor on the second insulating layer, respectively;
• forming a light emitting layer on the second insulating layer, wherein the light emitting layer is in contact with the first electrode through the second through hole;
• forming a second electrode layer on the light emitting layer, wherein the second electrode layer comprises a plurality of second electrodes arranged in an array, and the second electrodes and the first electrodes are aligned with each other;
• forming a barrier layer on the second electrode layer and forming a third through hole corresponding to the thin film transistor on the barrier layer, respectively;
• forming an auxiliary electrode layer on the barrier layer, wherein the auxiliary electrode layer comprises rows of auxiliary electrode, each row of the auxiliary electrodes is corresponding to a row of the second electrodes, and each of the auxiliary electrodes is connected with one of the second electrodes through the third through hole;
• and
• forming a planarization layer on the auxiliary electrode layer.