Semiconductor device

A method of forming a semiconductor device comprising:

• forming a semiconductor layer which includes a first side surface, a second side surface facing the first side surface, a first end portion, and a second end portion facing the first end portion, the first side surface and the second side surface being located between the first end portion and the second end portion;
• forming a first gate electrode;
• forming a second gate electrode;
• forming a first conductive layer;
• forming a second conductive layer;
• forming a first gate insulating layer between the first gate electrode and the first side surface;
• forming a second gate insulating layer between the second gate electrode and the second side surface;
• forming a first metal oxide layer between the first conductive layer and the first end portion;
• and
• forming a second metal oxide layer between the second conductive layer and the second end portion.