Multilayer selector device with low leakage current
AssigneeIntel Corporation
InventorsElijah V. Karpov, Prashant Majhi, Ravi Pillarisetty, Uday Shah, James S. Clarke
Life of this patent
Estimating the term…
Abstract
An embodiment includes an apparatus comprising: first and second electrodes; first and second insulation layers between the first and second electrodes; and a middle layer between the first and second insulation layers; wherein (a) the middle layer includes material that has a first resistance when the first electrode is biased at a first voltage level and a second resistance when the first electrode is biased at a second voltage level; (b) the first resistance is less than the second resistance and the first voltage level is greater than the second voltage level. Other embodiments are described herein.
Claims22
An apparatus comprising:
- first and second electrodes;
- first and second insulation layers between the first and second electrodes;
- and
- a middle layer between the first and second insulation layers;
- wherein (a) the middle layer includes material that has a first resistance when the first electrode is biased at a first voltage level and a second resistance when the first electrode is biased at a second voltage level;
- and (b) the first resistance is less than the second resistance and the first voltage level is greater than the second voltage level.
An apparatus comprising:
- first and second electrodes;
- first and second insulation layers between the first and second electrodes;
- and
- a middle layer between the first and second insulation layers;
- wherein (a) each of the first and second insulation layers includes at least one member selected from the group comprising:
- Al2O3, HfO2, TiO2, ZrO2, Ta2O5, and Nb2O5, and (b) the material of the middle layer includes at least one member selected from the group comprising:
- a chalcogenide material, a metal-insulator-transition (MIT) material, and a Mott transition material.
Dependencies are inferred from the claim text.