Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus
AssigneeSony Corporation
InventorsHideaki TOGASHI, Kosuke NAKANISHI
Life of this patent
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Abstract
A semiconductor device of the present disclosure includes: a semiconductor element disposed on a first surface side of a semiconductor substrate; a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate; and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.
Claims20
A semiconductor device, comprising:
- a semiconductor element disposed on a first surface side of a semiconductor substrate;
- a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate;
- and
- an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.
A method of manufacturing a semiconductor device, the semiconductor device including
- a semiconductor element disposed on a first surface side of a semiconductor substrate,
- a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate, and
- an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the method comprising:
- using the through-electrode as a gate electrode of the amplifying transistor;
- and
- forming a source region and a drain region of the amplifier transistor around the through-electrode.
A solid-state imaging device, comprising:
- a photoelectric converter element disposed on a first surface side of a semiconductor substrate;
- a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained by photoelectric conversion of the photoelectric converter element to a second surface side of the semiconductor substrate;
- and
- an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.
An electronic apparatus, comprising
- a solid-state imaging device including
- a photoelectric converter element disposed on a first surface side of a semiconductor substrate,
- a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained by photoelectric conversion of the photoelectric converter element to a second surface side of the semiconductor substrate, and
- an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.
Dependencies are inferred from the claim text.