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US 2019/0057975 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorJin Ha KIM
Life of this patent
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Abstract
Provided herein is a semiconductor device and a method of manufacturing the same. The semiconductor device has improved erase characteristics by using a select gate enclosing a portion a first semiconductor region overlapping a second semiconductor region. The first semiconductor region and the second semiconductor region are formed of different semiconductor materials.
Claims20
A semiconductor device comprising:
- a doped semiconductor layer doped with first conductivity type impurities;
- a channel pattern including a first semiconductor region and a second semiconductor region, wherein the first semiconductor region encloses a sidewall of the doped semiconductor layer, wherein the second semiconductor region is disposed between the first semiconductor region and the doped semiconductor layer, and wherein the second semiconductor region is formed of semiconductor material that is different from semiconductor material from which the first semiconductor region is formed;
- and
- a first select gate enclosing a portion of the first semiconductor region overlapping the second semiconductor region.
1 more element
A method of manufacturing a semiconductor device, comprising:
- forming a first stack, wherein the first stack includes first material layers and second material layers that are alternately stacked;
- forming a second stack on the first stack, wherein the second stack includes at least one third material layer and at least one fourth material layer;
- forming a hole that passes through the first stack and the second stack;
- forming at least one first semiconductor layer along a sidewall of the hole, wherein the at least one first semiconductor layer overlaps the first stack and the second stack;
- forming a second semiconductor layer on the at least one first semiconductor layer in a portion of the hole passing through the second stack, wherein the second semiconductor layer is formed of semiconductor material that is different from semiconductor material from which the at least one first semiconductor layer is formed;
- and
- forming a doped semiconductor layer on the second semiconductor layer such that the portion of the hole passing through the second stack is filled with the doped semiconductor layer, wherein the doped semiconductor layer is doped with first conductivity type impurities.
4 more elements
Dependencies are inferred from the claim text.