Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate of a first conductivity type, the semiconductor substrate including a cell region spreading in a second direction and in a third direction, the second direction crossing a first direction, the third direction crossing the first direction and the second direction;
• a stacked body provided in the cell region and included in a memory cell array, the stacked body including a conductive layer and an insulating layer stacked alternately along the first direction;
• a transistor disposed on the semiconductor substrate between the stacked body and an edge portion of the semiconductor substrate, the transistor being included in a peripheral circuit of the memory cell array;
• a first silicon oxide film surrounding the stacked body in the second and third directions on the semiconductor substrate and being disposed between the stacked body and the transistor;
• a second silicon oxide film surrounding the first silicon oxide film and being separated from the first silicon oxide film in the second and third directions on the semiconductor substrate, the second silicon oxide film being disposed between the edge portion and the first silicon oxide film;
• and
• a first silicon nitride film including a portion provided on the substrate in a first region, the first region being positioned between the stacked body and the transistor and between the first silicon oxide film and the second silicon oxide film, the portion surrounding the stacked body in the second and third directions on the semiconductor substrate.