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US 2019/0057960 A1Published application
Semiconductor device having electrostatic discharge protection structure
AssigneeCsmc Technologies Fab2 Co., Ltd.
InventorKui XIAO
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AssigneeCsmc Technologies Fab2 Co., Ltd.
InventorKui XIAO
Estimating the term…
Disclosed is a semiconductor device having an e1ectrostatic discharge protection structure. The e1ectrostatic discharge protection structure is a diode connected between a gate e1ectrode and a source e1ectrode of the semiconductor device. The diode comprises a diode body and two connection portions connected to two ends of the diode body and respectively used for electrically connecting to the gate e1ectrode and the source e1ectrode. Lower parts of the two connection portions are respective1y provided with a trench. An insulation 1ayer is provided on an inner surface of the trench and the surface of a substrate between trenches. The diode body is provided on the insu1ation 1ayer on the surface of the substrate. The connection portions respectively extend downwards into respective trenches from one end of the diode body. A dielectric layer is provided on the diode, and a meta1 conductor 1ayer is provided on the dielectric layer.
A semiconductor device having an electrostatic discharge (ESD) protection structure, wherein the ESD protection structure is a diode coupled between a gate and a source of the semiconductor device, the diode comprises a diode body and two connecting portions coupled to both ends of the diode body, the two connecting portions are configured to be electrically coupled to the gate and the source, respectively;
(canceled)
Dependencies are inferred from the claim text.