Permanent functional carrier systems and methods
AssigneeIntel Corporation
InventorsBrennen K. Mueller, Patrick Morrow, Paul B. Fischer, Kimin Jun
Life of this patent
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Abstract
An embodiment includes an apparatus comprising: a first device layer included in a top edge of a semiconductor substrate; metal layers, on the first device layer, including first and second metal layers; a second device layer on the metal layers; and additional metal layers on the second device layer; wherein the second device layer is not included in any semiconductor substrate. Other embodiments are described herein.
Claims24
An apparatus comprising:
- a first device layer included in a top edge of a semiconductor substrate;
- metal layers, on the first device layer, including first and second metal layers;
- a second device layer on the metal layers;
- and
- additional metal layers on the second device layer.
The apparatus of claim 3, wherein the first metal portion is horizontally offset from the second metal portion such that a vertical axis, orthogonal to the substrate, intersects one of the first and second metal portions but not another of the first and second metal portions.
An apparatus comprising:
- a first device layer included in a top edge of a semiconductor substrate;
- metal layers, on the first device layer, including first and second metal layers;
- and
- a second device layer on the metal layers;
- wherein (a) the first metal layer a includes a first dielectric portion coplanar with a first metal portion;
- (b) the second metal layer includes a second dielectric portion coplanar with a second metal portion;
- and (c) the first metal portion is bonded to the second metal portion.
A method comprising:
- forming a first device layer in a first semiconductor substrate;
- forming a first metal layer on the first device layer;
- forming a second device layer in a second semiconductor substrate;
- forming a second metal layer on the second device layer;
- and
- bonding the first metal layer to the second metal layer.
An apparatus comprising:
- a semiconductor substrate;
- metal layers, on the first device layer, including first and second metal layers;
- and
- a second device layer on the metal layers;
- wherein (a) the first metal layer a includes a first dielectric portion coplanar with a first metal portion;
- (b) the second metal layer includes a second dielectric portion coplanar with a second metal portion;
- and (c) the first metal portion is bonded to the second metal portion.
Dependencies are inferred from the claim text.