Semiconductor package substrate and method for manufacturing same

A method of manufacturing a semiconductor package substrate, the method comprising:

• forming a trench in a lower surface of a base substrate of a conductive material;
• filling the trench with resin;
• curing the resin;
• removing the resin exposed from the trench;
• and
• forming a die pad having a flat surface and a lead separated from the die pad on an upper surface of the base substrate, by patterning an opposite surface of the base substrate to expose at least a part of the resin filling the trench,
• wherein the lead comprises a bonding pad having a flat surface and a connection pattern connected to the bonding pad,
• at least a part of the trench is formed in an area corresponding to the lead, the trench has a first depth of an area corresponding to the bonding pad and a second depth of an area corresponding to the connection pattern, and the first depth is smaller than the second depth, and
• the bonding pad that is an area where a wire is bonded comprises a protrusion protruding toward the lower surface, and the central thickness of the bonding pad is greater than a peripheral thickness of the bonding pad.

A semiconductor package substrate in which a base substrate having an upper surface and a lower surface and formed of a conductive material is filled with resin formed of an insulating material, the semiconductor package substrate comprising:

• a die pad formed of the conductive material on the upper surface;
• a lead arranged on the upper surface by being electrically separated from the die pad, and comprising a bonding pad that is a wire bonding area, a connection pattern, and a lead pad;
• and
• a lead land integrally formed with the lead pad on the lower surface,
• wherein the bonding pad comprises a protrusion protruding toward the lower surface,
• the connection pattern connects the bonding pad and the lead pad, and
• a central thickness of the bonding pad is greater than a thickness of the connection pattern.