Semiconductor structure and method for forming the same
AssigneeUnited Microelectronics Corp.
InventorsYong-Liang LI, Hao SU
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Abstract
A semiconductor structure includes a substrate and a CMOS structure. The CMOS structure includes a PMOS structure and a NMOS structure. The PMOS structure includes two first source/drain regions disposed in the substrate, a first gate dielectric disposed partially in the substrate between the first source/drain regions, and a fully silicided gate electrode disposed on the first gate dielectric. The NMOS structure includes two second source/drain regions disposed in the substrate, a second gate dielectric disposed partially in the substrate between the second source/drain regions, and a non-silicided conductive gate electrode disposed on the second gate dielectric.
Claims20
A semiconductor structure, comprising:
- a substrate;
- and
- a CMOS structure, comprising:
- a PMOS structure, comprising:
- two first source/drain regions disposed in the substrate;
- a first gate dielectric disposed partially in the substrate between the first source/drain regions such that a bottom surface of the first gate dielectric is at a level lower than a top surface of the substrate;
- and
- a fully silicided gate electrode disposed on the first gate dielectric;
- and
- a NMOS structure, comprising:
- two second source/drain regions disposed in the substrate;
- a second gate dielectric disposed partially in the substrate between the second source/drain regions such that a bottom surface of the second gate dielectric is at a level lower than the top surface of the substrate;
- and
- a non-silicided conductive gate electrode disposed on the second gate dielectric.
A method for forming a semiconductor structure, comprising:
- providing a preliminary structure having a PMOS region and a NMOS region, the preliminary structure comprising:
- a substrate;
- two first source/drain regions formed in the substrate in the PMOS region;
- and
- two second source/drain regions formed in the substrate in the NMOS region;
- forming a first gate dielectric partially into the substrate between the first source/drain regions and a second gate dielectric partially into the substrate between the second source/drain regions;
- forming a fully silicided gate electrode on the first gate dielectric;
- and
- forming a non-silicided conductive gate electrode on the second gate dielectric.
Dependencies are inferred from the claim text.